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Photoemission and low energy electron microscopy study on the formation and nitridation of indium droplets on Si (111)7 × 7 surfaces

Identifieur interne : 000729 ( Main/Repository ); précédent : 000728; suivant : 000730

Photoemission and low energy electron microscopy study on the formation and nitridation of indium droplets on Si (111)7 × 7 surfaces

Auteurs : RBID : Pascal:13-0161832

Descripteurs français

Pascal (Inist)
- Photoémission, Microscopie électronique, Nitruration, Indium, Gouttelette, Epitaxie gouttelette, Mécanisme croissance, Composé III-V, Nanostructure, Couche monomoléculaire, Adatome, Propriété surface, Diode électroluminescente, Croissance latérale, Nitrure d'indium, Silicium, Semiconducteur, Ammoniac, In, Substrat silicium, InN, Si, NH3, 6855A, 8107, 8560D, 8560J.

English descriptors

KwdEn :
- Adatoms, Ammonia, Droplet epitaxy, Droplets, Electron microscopy, Growth mechanism, III-V compound, Indium, Indium nitride, Lateral growth, Light emitting diodes, Monolayers, Nanostructures, Nitridation, Photoemission, Semiconductor materials, Silicon, Surface properties.

Abstract

The formation and nitridation of indium (In) droplets on Si (111)7 × 7, with regard to In droplet epitaxy growth of InN nanostructures, were studied using a spectroscopic photoemission and low energy electron microscopy, for the In coverages from 0.07 to 2.3 monolayer (ML). The results reveal that the In adatoms formed well-ordered clusters while keeping the Si (111)7 x 7 surface periodicity at 0.07 ML and a single √3 x √3 phase at 0.3 ML around 440-470 °C. At 0.82 ML, owing to the presence of structurally defect areas beside the 7 x 7 domains, 3-D In droplets evolved concomitantly with the formation of 4 × 1-In cluster chains, accompanied by a transition in surface electric property from semiconducting to metallic. Further increasing the In to 2.3 ML led to a moderate increase in number density and an appreciable lateral growth of the droplets, as well as the multi-domain In phases. Upon nitridation with NH₃ at ∼480 °C, besides the nitridation of the In droplets, the N radicals also dissociated the In-Si bonds to form Si-N. This caused a partial disintegration of the ordered In phase and removal of the In adatoms between the In droplets.

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Pascal:13-0161832

Le document en format XML

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<author><name sortKey="Qi, B" uniqKey="Qi B">B. Qi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Science Institute, University of Iceland, Dunhaga 3</s1>
<s2>107 Reykjavik</s2>
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<author><name sortKey="Olafsson, S" uniqKey="Olafsson S">S. Olafsson</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Science Institute, University of Iceland, Dunhaga 3</s1>
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<author><name sortKey="Gothelid, M" uniqKey="Gothelid M">M. Göthelid</name>
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<author><name sortKey="Gislason, H P" uniqKey="Gislason H">H. P. Gislason</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Science Institute, University of Iceland, Dunhaga 3</s1>
<s2>107 Reykjavik</s2>
<s3>ISL</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<author><name sortKey="Agnarsson, B" uniqKey="Agnarsson B">B. Agnarsson</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Science Institute, University of Iceland, Dunhaga 3</s1>
<s2>107 Reykjavik</s2>
<s3>ISL</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>Islande</country>
<wicri:noRegion>107 Reykjavik</wicri:noRegion>
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<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Applied Physics, Chalmers University of Technology</s1>
<s2>41296 Gothenburg</s2>
<s3>SWE</s3>
<sZ>5 aut.</sZ>
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<country>Suède</country>
<wicri:noRegion>41296 Gothenburg</wicri:noRegion>
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<date when="2013">2013</date>
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<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Adatoms</term>
<term>Ammonia</term>
<term>Droplet epitaxy</term>
<term>Droplets</term>
<term>Electron microscopy</term>
<term>Growth mechanism</term>
<term>III-V compound</term>
<term>Indium</term>
<term>Indium nitride</term>
<term>Lateral growth</term>
<term>Light emitting diodes</term>
<term>Monolayers</term>
<term>Nanostructures</term>
<term>Nitridation</term>
<term>Photoemission</term>
<term>Semiconductor materials</term>
<term>Silicon</term>
<term>Surface properties</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Photoémission</term>
<term>Microscopie électronique</term>
<term>Nitruration</term>
<term>Indium</term>
<term>Gouttelette</term>
<term>Epitaxie gouttelette</term>
<term>Mécanisme croissance</term>
<term>Composé III-V</term>
<term>Nanostructure</term>
<term>Couche monomoléculaire</term>
<term>Adatome</term>
<term>Propriété surface</term>
<term>Diode électroluminescente</term>
<term>Croissance latérale</term>
<term>Nitrure d'indium</term>
<term>Silicium</term>
<term>Semiconducteur</term>
<term>Ammoniac</term>
<term>In</term>
<term>Substrat silicium</term>
<term>InN</term>
<term>Si</term>
<term>NH3</term>
<term>6855A</term>
<term>8107</term>
<term>8560D</term>
<term>8560J</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">The formation and nitridation of indium (In) droplets on Si (111)7 × 7, with regard to In droplet epitaxy growth of InN nanostructures, were studied using a spectroscopic photoemission and low energy electron microscopy, for the In coverages from 0.07 to 2.3 monolayer (ML). The results reveal that the In adatoms formed well-ordered clusters while keeping the Si (111)7 x 7 surface periodicity at 0.07 ML and a single √3 x √3 phase at 0.3 ML around 440-470 °C. At 0.82 ML, owing to the presence of structurally defect areas beside the 7 x 7 domains, 3-D In droplets evolved concomitantly with the formation of 4 × 1-In cluster chains, accompanied by a transition in surface electric property from semiconducting to metallic. Further increasing the In to 2.3 ML led to a moderate increase in number density and an appreciable lateral growth of the droplets, as well as the multi-domain In phases. Upon nitridation with NH<sub>3</sub>
 at ∼480 °C, besides the nitridation of the In droplets, the N radicals also dissociated the In-Si bonds to form Si-N. This caused a partial disintegration of the ordered In phase and removal of the In adatoms between the In droplets.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Photoemission and low energy electron microscopy study on the formation and nitridation of indium droplets on Si (111)7 × 7 surfaces</s1>
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<fA11 i1="01" i2="1"><s1>QI (B.)</s1>
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<fA11 i1="02" i2="1"><s1>OLAFSSON (S.)</s1>
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<fA11 i1="05" i2="1"><s1>AGNARSSON (B.)</s1>
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<fA14 i1="01"><s1>Science Institute, University of Iceland, Dunhaga 3</s1>
<s2>107 Reykjavik</s2>
<s3>ISL</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
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<fA14 i1="02"><s1>Materialfysik, MAP, ICT, KTH, Electrum 229</s1>
<s2>16440 Kista</s2>
<s3>SWE</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Department of Applied Physics, Chalmers University of Technology</s1>
<s2>41296 Gothenburg</s2>
<s3>SWE</s3>
<sZ>5 aut.</sZ>
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<fA20><s1>61-69</s1>
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<fC01 i1="01" l="ENG"><s0>The formation and nitridation of indium (In) droplets on Si (111)7 × 7, with regard to In droplet epitaxy growth of InN nanostructures, were studied using a spectroscopic photoemission and low energy electron microscopy, for the In coverages from 0.07 to 2.3 monolayer (ML). The results reveal that the In adatoms formed well-ordered clusters while keeping the Si (111)7 x 7 surface periodicity at 0.07 ML and a single √3 x √3 phase at 0.3 ML around 440-470 °C. At 0.82 ML, owing to the presence of structurally defect areas beside the 7 x 7 domains, 3-D In droplets evolved concomitantly with the formation of 4 × 1-In cluster chains, accompanied by a transition in surface electric property from semiconducting to metallic. Further increasing the In to 2.3 ML led to a moderate increase in number density and an appreciable lateral growth of the droplets, as well as the multi-domain In phases. Upon nitridation with NH<sub>3</sub>
 at ∼480 °C, besides the nitridation of the In droplets, the N radicals also dissociated the In-Si bonds to form Si-N. This caused a partial disintegration of the ordered In phase and removal of the In adatoms between the In droplets.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A15A</s0>
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<fC02 i1="02" i2="3"><s0>001B80A07Z</s0>
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<fC02 i1="03" i2="X"><s0>001D03F15</s0>
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<s5>01</s5>
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<s5>01</s5>
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<s5>02</s5>
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<s5>02</s5>
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<fC03 i1="03" i2="3" l="FRE"><s0>Nitruration</s0>
<s5>03</s5>
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<fC03 i1="03" i2="3" l="ENG"><s0>Nitridation</s0>
<s5>03</s5>
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<fC03 i1="04" i2="3" l="FRE"><s0>Indium</s0>
<s2>NC</s2>
<s5>04</s5>
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<fC03 i1="04" i2="3" l="ENG"><s0>Indium</s0>
<s2>NC</s2>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Gouttelette</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Droplets</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Epitaxie gouttelette</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Droplet epitaxy</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Epitaxia gotita</s0>
<s5>06</s5>
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<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Growth mechanism</s0>
<s5>07</s5>
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<fC03 i1="07" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0>
<s5>07</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>09</s5>
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<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Couche monomoléculaire</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Monolayers</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Adatome</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Adatoms</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Propriété surface</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Surface properties</s0>
<s5>12</s5>
</fC03>
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<s5>13</s5>
</fC03>
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<s5>13</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Croissance latérale</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Lateral growth</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Crecimiento lateral</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Nitrure d'indium</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Indium nitride</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Indio nitruro</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Silicium</s0>
<s2>NC</s2>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Silicon</s0>
<s2>NC</s2>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Semiconducteur</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Semiconductor materials</s0>
<s5>17</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Ammoniac</s0>
<s5>29</s5>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>Ammonia</s0>
<s5>29</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>In</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Substrat silicium</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>InN</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>Si</s0>
<s4>INC</s4>
<s5>49</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>NH3</s0>
<s4>INC</s4>
<s5>50</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>6855A</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>8107</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>8560D</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="27" i2="3" l="FRE"><s0>8560J</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>140</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
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Photoemission and low energy electron microscopy study on the formation and nitridation of indium droplets on Si (111)7 × 7 surfaces

Photoemission and low energy electron microscopy study on the formation and nitridation of indium droplets on Si (111)7 × 7 surfaces

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Abstract

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